PhD – Energy efficient memory device based on innovative Mott material: nanofabrication process[...]

Organisation/Company CNRS Department Institut d'Electronique de Microélectronique et de Nanotechnologie Research Field Engineering Physics Technology Researcher Profile First Stage Researcher (R1) Application Deadline 17 Apr 2026 - 23:59 (UTC) Country France Type of Contract Temporary Job Status Full-time Hours Per Week 35 Offer Starting Date 1 Jul 2026 Is the job funded through the EU Research Framework Programme? Not funded by a EU programme Is the Job related to staff position within a Research Infrastructure? No

Offer Description

The team Physics of Nanostructure and Quantum Devices works on the electrical and optical properties of promising nanomaterials, with both fundamental and device-oriented approaches. The team is currently composed of 6 permanent researchers, 1 research engineer, 2 Postdocs and 2 PhD students; the recruited PhD will also work in connection with all the members of the Marmotte consortium.

IEMN is a research institute created by the National Centre for Scientific Research (CNRS), two universities and engineer schools of France northern region. IEMN is part of the RENATECH network and as such, the equipment for design, fabrication and characterization of micro/nano devices are at the best european level. The institute has a total staff of about 500 persons including 150 permanent researchers, 100 engineers and administrative agents, about 150 PhD students. The lab is very open to international collaborations; more than 100 foreigner scientists coming from 20 different countries are currently working at IEMN. IEMN scientific activity covers a large domain going from the physics of materials and nanostructures to microwaves, telecommunications and acoustics instrumentation.

The City of Lille offers an attractive living environment while being a student city of more than a million inhabitants. Furthermore, it sits at the crossroad of three capital cities of Europe (Paris, London and Brussels being reachable within an hour train ride).Website:

In the digital age, the energy consumption of microelectronic devices presents a major challenge, accounting for up to 50% of global electricity consumption by 2030. This situation is largely due to the Von Neumann computing architecture, which limits the energy efficiency of current systems. Considering this, memristors are innovative electronic components that enable the creation of hardware neural networks inspired by the brain, potentially reducing the energy consumption of AI systems by a factor of 10,000 compared to conventional software solutions.

In this context, the MARMOTTE project (Mott based nano-memristors networks for ultra-low-power neuromorphic computing) aims to develop innovative memory devices based on Mott insulators, a class of materials that exhibit a unique resistive transition when subjected to electrical pulses. This project focuses on creating networks of nanometer-scale Mott memories with switching energies in the femtojoule range. This will be obtained thanks to the combination of advanced nanofabrication and nanocharacterization techniques from IEMN, a member of the RENATECH network, and an in-depth understanding of the electronic and thermal properties of Mott insulators. The Marmotte project, funded by the Hauts-de-France Region and FEDER, involves about twenty researchers from IEMN in Villeneuve d'Ascq (Lille metropolitan area) and IMN in Nantes and includes several recruitment opportunities.

The PhD1 position focuses on the nanofabrication of a demonstrator for a Mott memory nanocrossbar based on the chalcogenide materials GaV4S8 and NiS2. It includes the development of a fabrication process for the integration of innovative nanoelectrodes, as well as advanced nanoscale characterization of the demonstrator. The successful PhD candidate will also have the opportunity to participate in the evaluation of the demonstrator's energy performance for neuromorphic computing.

Person specification

• A master's degree in physics, Engineering, Material Sciences or related areas.
• Demonstrate a keen interest in pursuing experimental research in Nanoscience.
• The ability to work independently, and as a member of a research team.
• A good command of English language.

Any or combination of the following will be a clear advantage:

• Experience in the fabrication of semiconductor devices in a clean-room environment
• Experience in nanocharacterization techniques
• Knowledge of strongly correlated electronic systems / Mott materials