Low Noise Amplifier Design For Cryogenic Applications

Program

PhD

Type

Position

Arrangement

On-site

Funding

Fully Funded

Deadline

30 Nov 2026

Posted

03 Mar 2026

Description

This PhD thesis addresses the critical challenge of developing electronic circuits that can operate reliably at cryogenic temperatures, particularly for quantum computing applications. As quantum processors require temperatures below 4 K to preserve quantum states, conventional electronic circuits must be redesigned to function in these extreme conditions.

The research will focus on two main objectives: First, performing RF electrical characterization and modeling of silicon-germanium heterojunction bipolar transistors (SiGe HBTs) in cryogenic environments. This involves conducting measurements at low temperatures and developing accurate models to describe their behavior. Second, optimizing low-noise amplifiers (LNAs) for cryogenic applications by studying the low-temperature behavior of individual passive and active devices and improving their design.

The work has applications beyond quantum computing, including space exploration, high-performance computing, and high-energy physics, where circuits must operate below 100 K. The successful candidate will work at the Advanced Transistors Laboratory within the Silicon Components Department (LETI) at Université Grenoble Alpes, contributing to cutting-edge research in cryogenic electronics.

The position offers a 36-month fully funded opportunity starting October 1, 2026, with an application deadline of November 30, 2026. The research addresses a growing need in the field as the race to build practical quantum computers intensifies.

Related Topics

cryogenic electronics, SiGe HBT, low-noise amplifiers, RF modeling

Annual tuition fees 391 € / year

Candidates with background in electrical engineering, photonics, or related fields; proficiency in RF engineering and semiconductor devices preferred