Epitaxy Engineer – Semiconductor Devices- F/H - REF 2526-IEA

Our client is a leading technology company operating in the power semiconductor industry. Specialising in the development of next‑generation devices based on Wide Band Gap (WBG) technologies, the company designs proprietary, high‑value solutions aimed at pushing the boundaries of performance, energy efficiency and power system integration.

As part of its continued growth and the expansion of its R&D activities, our client is currently seeking an :

Based within the Advanced Materials team, you will be responsible for the development and optimisation of epitaxial growth processes for power semiconductor devices based on Wide Band Gap (WBG) technologies.

Working closely with the Process Engineering and Device Design teams, you will contribute to the development, optimisation and characterisation of epitaxial structures meeting the specifications of the devices under development. In this role, you will play a key part in the continuous improvement of epitaxial processes, process deviation analysis, as well as productivity and yield optimisation.

Key Responsibilities

• Developing and optimising epitaxial structures in accordance with material and device specifications,
• Defining and executing development plans related to epitaxial growth processes,
• Developing and optimising epitaxial growth recipes for various products,
• Optimising characterisation processes and analysing experimental results,
• Identifying process deviations, performing root‑cause analyses and implementing corrective actions,
• Improving process robustness, manufacturing yields and overall productivity,
• Performing first‑level maintenance activities on epitaxy equipment,
• Collaborating with equipment suppliers and international technology partners,
• Documenting activities, presenting results during technical reviews and contributing to intellectual property activities.

Profile

You hold an Engineering degree or a PhD in Materials Science, Semiconductor Physics, Microelectronics or a related discipline. You have proven experience in the development and optimisation of epitaxial growth processes for nitride‑based materials (GaN, AlGaN or related technologies), ideally applied to power semiconductor devices.

Hands‑on experience with MOCVD, MOVPE or related epitaxial growth technologies would be highly desirable. Autonomous, analytical and rigorous, you enjoy working in demanding technical environments and contributing to highly innovative projects. Your ability to operate within a multidisciplinary environment and collaborate with external partners will be a key factor in your success. A professional level of English is required to work effectively in an international environment.

What We Offer

• A key role in the development and optimisation of epitaxial growth processes for innovative power semiconductor technologies;
• A highly advanced technological environment fostering close collaboration between materials, process and device design teams, providing broad exposure to the technologies being developed,
• Diverse projects involving recipe development, process optimisation, technology transfer and continuous improvement,
• Regular interactions with international industrial partners and equipment suppliers,
• A company culture that encourages autonomy, accountability and initiative,
• Genuine career development opportunities within a fast‑growing organisation.