Device Engineer – Microelectronics (GaN on Silicon, Nano LED, 3D Integration) M/F

Device Engineer – Microelectronics (GaN on Silicon, Nano LED, 3D Integration) M/F

Posted on 23 July 2026 long-term contract, Champagnier microelectronics

Company context: We are an innovative and leading company in the field of micro LEDs, specializing in the microelectronic design of high-performance solutions for advanced applications such as next-generation screen displays, virtual reality solutions, and optical links for communication in data centers. We develop cutting-edge components, including 3D GaN-on-silicon nanowire-based microLEDs, and are looking for an engineer to strengthen our development team.

Main mission :

Reporting to the Device and Process Integration Manager, the Device Engineer will actively participate in optimizing microLED performance. Their main role will be to characterize, analyze, and improve the electro-optical properties of microLEDs, focusing on recombination mechanisms and charge transport to optimize microLED efficiency and uniformity and reduce defects. This work will be carried out within a multidisciplinary team, in close collaboration with the epitaxy, characterization, testing, and process teams.

Your main missions:

• Performance increase of microLEDs:
• Analysis of the electro-optical properties of µLEDs (efficiency, uniformity, defectivity).
• Characterization of recombination mechanisms and charge transport.
• Proposal and implementation of experimental plans to optimize performance.
• Coordination with the epitaxy, characterization and process teams to identify areas for improvement.
• Facilitating working groups aimed at increasing component performance.
• Analysis methodology:
• Development and application of appropriate characterization plans (CL, PL, TEM, Raman, EDX, EBIC, IVLT).
• Collaboration with the epitaxy, simulation and design teams to solve technical problems.
• To guarantee the quality and reliability of the measurements taken.
• Development of characterization methods:
• Participate in adapting measurement benches for specific test needs.
• Developing data analysis routines to make them usable by operational teams.
• Ensure the state of the art of the characterizations used and adapt them to the needs of the project.
• Quality and documentation:
• Writing technical reports detailing the results of the analyses.
• Presentation of results during technical meetings.
• Implementation and monitoring of quality procedures and root cause analyses to ensure the reliability of results.
• Intellectual property :
• Contribution to the development of new intellectual property based on the developments carried out.

Required profile :

• Diploma : Bac+5 to Bac+8 in materials, semiconductors or similar fields (Master, Engineer, PhD).
• Experience: PhD or equivalent first experience preferred in a research or innovation environment.
• Technical skills :
  • Extensive knowledge of microelectronics and semiconductors, particularly GaN type III-V semiconductors, is desirable.
  • Mastery of techniques for characterizing electro-optical properties (CL, PL, TEM, Raman, etc.).
  • Skills in complex data analysis.
  • Experience in developing measurement benches is a plus
• Languages: Professional English.
• Personal qualities : Team spirit, responsiveness, analytical and synthesis skills, autonomy, organization and the ability to communicate effectively with multidisciplinary teams.
• Innovation at the heart of technology: Join a dynamic company at the forefront of microelectronics research and participate in exciting projects on disruptive technologies.
• Interdisciplinary collaboration: Work with experts in various fields (epitaxy, simulation, design, process) and develop your skills in a stimulating environment.
• Professional development: Opportunities to grow within a team with a strong culture of innovation.

Type of contract: CDILocation: ChampagnierWorking hours: Full time, Monday to Friday, daytime hours – teleworking possiblePublished on: 23/07/2026